Numerical simulation of the current-voltage characteristics ofheteroepitaxial Schottky-barrier diodes |
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Authors: | Bhapkar U.V. Mattauch R.J. |
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Affiliation: | Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA; |
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Abstract: | A numerical model resulting in the current-voltage characteristics of standard and heteroepitaxial Schottky-barrier diodes is presented. Simulations of GaAs diodes, as well as InGaAs diodes grown on GaAs and InP substrates, are presented. The model considers quantum-mechanical tunneling, and is therefore applicable to highly doped devices. A self-consistent drifted-Maxwellian distribution is used to model the electron energy distribution at high current densities. The assumption of a drifted-Maxwellian distribution is shown to lead to higher current at high bias than predicted with the assumption of a Maxwell-Boltzmann or Fermi-Dirac distribution. The presence of a heterojunction at the InGaAs-substrate interface is predicted to lead to an additional series resistance component |
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