| VLSI中CVD二氧化硅膜的淀积 |
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| 引用本文： | 马永良,黄英.VLSI中CVD二氧化硅膜的淀积[J].电子器件,1998,21(2):113-117. |
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| 作者姓名： | 马永良 黄英 |
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| 作者单位： | 中国华晶电子集团公司中央研究所 |
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| 摘 要： | 介绍了大规模集成电路中两种ＣＶＤ二氧化硅膜的淀积，并对这两种二氧化硅膜的淀积方式及其性能进行了比较。指出ＴＥＯＳ淀积方式，是今后集成电路中ＳｉＯ２淀积的主流工艺。
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| 关 键 词： | CVD TEOS 二氧化硅 VLSI |
Deposition of CVD SiO 2 Used in VLSI |
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| Ma,Yongliang,Huang,Ying.Deposition of CVD SiO 2 Used in VLSI[J].Journal of Electron Devices,1998,21(2):113-117. |
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| Authors: | Ma Yongliang Huang Ying |
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| Abstract: | In this paper, two kinds of CVD SiO 2 deposition process used in VLSI process are introduced. Compared with each other in their characters, CVD TEOS SiO 2 is better and will become a major process of SiO 2 deposition for future VLSI production. |
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| Keywords: | CVD TEOS SiO 2 |
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