| 低温下应变外延层的单层生长 |
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| 引用本文： | 段瑞飞,王宝强,朱占平,曾一平.低温下应变外延层的单层生长[J].半导体学报,2003,24(4). |
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| 作者姓名： | 段瑞飞 王宝强 朱占平 曾一平 |
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| 作者单位： | 中国科学院半导体研究所,新材料部,北京,100083 |
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| 摘 要： | 用接触式原子力显微镜来观察460℃低温下生长的In0.35Ga0.65As/GaAs外延层形貌.实验发现,这种460℃低温生长材料的失配外延层既不是层状的FvdM生长模式也不是岛状的SK自组织生长模式,而是由原子单层构成的梯田状大岛.原子力显微镜测试表明台阶的厚度为0.28nm,约为一个原子单层,这种介于层状和岛状生长之间的模式有助于了解失配异质外延的生长过程.
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| 关 键 词： | InGaAs/GaAs 分子束外延 原子力显微镜 外延层 单层生长 |
Single Layer Growth of Strained Epitaxy at Low Temperature |
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| Duan Ruifei,Wang Baoqiang,Zhu Zhanping,Zeng Yiping.Single Layer Growth of Strained Epitaxy at Low Temperature[J].Chinese Journal of Semiconductors,2003,24(4). |
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| Authors: | Duan Ruifei Wang Baoqiang Zhu Zhanping Zeng Yiping |
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| Abstract: | Contacting mode atomic force microscopy (AFM) is used to measure the In0.35Ga0.65As/GaAs epilayer grown at low temperature (460℃).Unlike the normal layer-by-layer growth (FvdM mode) or self-organized islands growth (SK mode),samples grown under 460℃ are found to be large islands with atomic thick terraces.AFM measurements reveale near one monolayer high steps.This kind of growth is good between FvdM and SK growth modes and can be used to understand the evolution of strained epitaxy from FvdM to SK mode. |
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| Keywords: | InGaAs/GaAs molecular beam epitaxy atomic force microscopy epilayer monolayer growth |
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