高跨导AlGaN/GaN HEMT器件

报道了生长在蓝宝石衬底上的AlGaN/GaN HEMT器件的制造工艺以及在室温下器件的性能.器件的栅长为1.0μm,源漏间距为4.0μm.器件的最大电流密度达到1000mA/mm,最大跨导高达198mS/mm,转移特性曲线表现出增益带宽较宽的特点.同时由所测得的S参数推出栅长为1.0μm器件的截止频率(fT)和最高振荡频率(fmax)分别为18.7GHz和19.1GHz.

High Transconductance AlGaN/GaN HEMT Growth on Sapphire Substrates

The fabrication and characterization of AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates by MBE are described.These 1.0μm gate-length devices exhibit a maximum drain current density as high as 1000mA/mm and a maximum transconductance of 198mS/mm.In sharp contrast to high current density HEMT fabricated on sapphire substrates,the extrinsic transconductance versus gate-to-source voltage profiles exhibit the broad plateaus over a large voltage swing.A unity gain cutoff frequency (fT) of 18.7GHz and a maximum frequency of oscillation (fmax) of 19.1GHz are also obtained.