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介电常数对比和填充率对光子晶体中光子禁带和局域态的调节
引用本文:陈沁,黄永箴,国伟华,于丽娟. 介电常数对比和填充率对光子晶体中光子禁带和局域态的调节[J]. 半导体学报, 2003, 24(12)
作者姓名:陈沁  黄永箴  国伟华  于丽娟
作者单位:中国科学院半导体研究所,集成光电子学国家重点联合实验室,北京,100083
基金项目:国家自然科学基金,国家重点基础研究发展计划(973计划)
摘    要:用有限时域差分法(FDTD)和Padé近似分析了二维光子晶体的能带结构和缺陷引起的局域态.针对介电常数对比和填充率对完整光子晶体中光子禁带以及缺陷态的影响作了研究.计算了不同缺陷的光子晶体模式的振荡频率和质量因子.数值模拟的结果表明通过改变介电参数对比和填充率可以实现对光子禁带的位置、宽度、数目以及对缺陷态的调整.

关 键 词:光子晶体  光子禁带  缺陷态  有限时域差分法

Modulation of Photonic Bandgap and Localized States by Dielectric Constant Contrast and Filling Factor in Photonic Crystals
Chen Qin,HUANG Yongzhen,Guo Weihua,Yu Lijuan. Modulation of Photonic Bandgap and Localized States by Dielectric Constant Contrast and Filling Factor in Photonic Crystals[J]. Chinese Journal of Semiconductors, 2003, 24(12)
Authors:Chen Qin  HUANG Yongzhen  Guo Weihua  Yu Lijuan
Abstract:The band structure of 2D photonic crystals (PCs) and localized states resulting from defects are analyzed by finite-difference time-domain (FDTD) technique and Padé approximation. The effect of dielectric constant contrast and filling factor on photonic bandgap (PBG) for perfect PCs and localized states in PCs with point defects are investigated. The resonant frequencies and quality factors are calculated for PCs with different defects. The numerical results show that it is possible to modulate the location,width and number of PBGs and frequencies of the localized states only by changing the dielectric constant contrast and filling factor.
Keywords:photonic crystals  photonic bandgap  defect states  FDTD
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