| 使用SiO2介质膜实现InGaAsP量子阱混杂 |
| |
| 引用本文： | 张靖,陆羽,王圩.使用SiO2介质膜实现InGaAsP量子阱混杂[J].半导体学报,2003,24(8). |
| |
| 作者姓名： | 张靖 陆羽 王圩 |
| |
| 作者单位： | 中国科学院半导体研究所,光电子研究发展中心,北京,100083 |
| |
| 摘 要： | 报道了使用SiO2介质膜导致的无杂质空位扩散实现InGaAsP多量子阱混杂的实验,得到200nm的最大带隙波长蓝移.另外,采用量子阱混杂制作了蓝移的FP腔激光器,其性能与未混杂的激光器相当.
|
| 关 键 词： | 光子集成回路 量子阱混杂 无杂质空位扩散 波长蓝移 |
Quantum Well Intermixing of InGaAsP QWs by Impurity Free Vacancy Diffusion Using SiO2 Encapsulation |
| |
| Zhang Jing,Lu Yu,Wang Wei.Quantum Well Intermixing of InGaAsP QWs by Impurity Free Vacancy Diffusion Using SiO2 Encapsulation[J].Chinese Journal of Semiconductors,2003,24(8). |
| |
| Authors: | Zhang Jing Lu Yu Wang Wei |
| |
| Abstract: | Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO2 encapsulation is reported.A maximum band gap wavelength blue-shift as large as 200nm is realized.Furthermore,an FP laser blue-shifted 21nm by QWI is fabricated with characteristics comparable with the as-grown one. |
| |
| Keywords: | photonic integrated circuit quantum well intermixing IFVD wavelength blue-shift |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
