| SOI MOSFET的失真行为 |
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| 引用本文： | 张国艳,黄如,张兴,王阳元. SOI MOSFET的失真行为[J]. 半导体学报, 2003, 24(8) |
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| 作者姓名： | 张国艳 黄如 张兴 王阳元 |
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| 作者单位： | 北京大学微电子学研究所,北京,100871 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家自然科学基金 |
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| 摘 要： | 采用幂级数方法对基于全耗尽(FD)SOI MOSFET和凹陷(RC)沟道SOI MOSFET的失真行为进行了研究,发现随着沟道长度的减小失真行为变坏,且RC SOI器件较FD器件具有更好的失真行为.同时,从实验数据可以看出,不理想的体接触会由于体分布电阻的增加而使失真行为变坏.该结果可以为低失真混合信号集成系统的设计提高指导方向.
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| 关 键 词： | 失真行为 幂级数 SOI MOSFET |
Distortion Behavior for SOI MOSFET |
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| Zhang Guoyan,Huang Ru,Zhang Xing,WANG Yangyuan. Distortion Behavior for SOI MOSFET[J]. Chinese Journal of Semiconductors, 2003, 24(8) |
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| Authors: | Zhang Guoyan Huang Ru Zhang Xing WANG Yangyuan |
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| Abstract: | Distortion analysis of SOI MOS transistor is presented.By the power series method,the distortion behaviors of FD (fully depleted) and RC (recessed channel) SOI MOS transistor configurations are investigated.It is shown that the distortion figures deteriorate with the scaling down of channel length,and the RC SOI device shows better distortion performance than the FD SOI device.At the same time,the experimental data show that the ineffective body contact can lead to an increase of the harmonic amplitude due to the bulk resistance.The presented results give an intuitive knowledge for the design of low distortion mixed-signal integrated system. |
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| Keywords: | distortion behavior power series method SOI MOSFET |
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