| 一种高性能的新结构IGBT |
| |
| 引用本文： | 程序,吴郁,刘兴明,王哲,亢宝位,李俊峰,韩郑生.一种高性能的新结构IGBT[J].半导体学报,2003,24(6). |
| |
| 作者姓名： | 程序 吴郁 刘兴明 王哲 亢宝位 李俊峰 韩郑生 |
| |
| 作者单位： | 1. 北京工业大学电子工程系,北京,100022
2. 中国科学院微电子中心,北京,100029 |
| |
| 摘 要： | 提出了一种低功率损耗的新结构IGBT.该新结构的创新点在于其复合耐压层结构,该耐压层包括深扩散形成的n型缓冲层和硼注入形成的透明背发射区两部分.虽然在正常工作条件下,该新结构IGBT工作于穿通状态,但器件仍具有非穿通IGBT(NPT-IGBT)的优良特性.该新结构IGBT具有比NPT-IGBT更薄的芯片厚度,从而可以获得更好的通态压降和关断功耗之间的折衷.实验结果表明:与NPT-IGBT相比较,新结构IGBT的功率损耗降低了40%.
|
| 关 键 词： | 缓冲层 深穿通 NPT-IGBT 透明发射区 |
A New Structure IGBT with High Performance |
| |
| Cheng Xu,Wu Yu,Liu Xingming,Wang Zhe,Kang Baowei,Li Junfeng,Han Zhengsheng.A New Structure IGBT with High Performance[J].Chinese Journal of Semiconductors,2003,24(6). |
| |
| Authors: | Cheng Xu Wu Yu Liu Xingming Wang Zhe Kang Baowei Li Junfeng Han Zhengsheng |
| |
| Abstract: | A new structure IGBT is proposed for reducing the power dissipation.It features a composite voltage-sustaining layer which includes a n-type buffer layer formed by ultra-deep diffusion and a transparent backside emitter formed by boron implantation.Working in a deep punch-through state during its normal operating condition,it still possesses all the characteristics of the robust non-punch-through IGBT (NPT-IGBT).With a chip-thickness thinner than that of the NPT-IGBT,the new structure presents a better trade-off relationship between the on-state voltage-drop and the turn-off loss.Experimental results show that the power loss of the new structure IGBT is 40% lower than that of the NPT-IGBT. |
| |
| Keywords: | buffer layer deep punch through NPT-IGBT transparent emitter |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
