| 纳米电子束曝光 |
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| 引用本文： | 刘明,陈宝钦,王云翔,张建宏. 纳米电子束曝光[J]. 半导体学报, 2003, 24(1) |
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| 作者姓名： | 刘明 陈宝钦 王云翔 张建宏 |
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| 作者单位： | 中国科学院微电子中心,北京,100029 |
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| 摘 要： | JEOL JBX-5000LS是矢量扫描的电子束曝光机.系统采用LaB6灯丝,可以工作在25kV和50kV的加速电压下.对该系统的分辨率、稳定性、场拼接和套刻精度进行了系列研究,得到了分辨率为30nm的图形,图形的套刻精度也优于40nm.
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| 关 键 词： | 电子束曝光系统 分辨率 套刻精度 |
Nano-Level Electron Beam Lithography |
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| Liu Ming,Chen Baoqin,Wang Yunxiang,Zhang Jianhong. Nano-Level Electron Beam Lithography[J]. Chinese Journal of Semiconductors, 2003, 24(1) |
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| Authors: | Liu Ming Chen Baoqin Wang Yunxiang Zhang Jianhong |
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| Abstract: | The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,stitching and overlay of this system are evaluated.The system can write complex patterns at dimensions down to 30nm.The demonstrated overlay accuracy of this system is better than 40nm. |
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| Keywords: | electron beam lithography system resolution overlay accuracy |
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