| Si／Si1—xGex异质结器件 |
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| 引用本文： | 罗浩平 蔡金华. Si／Si1—xGex异质结器件[J]. 微电子学, 1993, 23(2): 27-32 |
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| 作者姓名： | 罗浩平 蔡金华 |
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| 作者单位： | 华晶公司中央研究所，华晶公司中央研究所 前24所分所，江苏无锡214035，前24所分所，江苏无锡214035 |
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| 摘 要： | 本文综述了国外Si/Si_(1-x)Ge_xHBT的发展状况,把出Si_(1-x)Ge_xHBT的特点和优越性,分析了Si_(1-x)Ge_xHBT的制造技术和设备要求,指出了Si/Si_(1-x)Gex器件的应用前景。
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| 关 键 词： | HBT 双极晶体管 异质结器件 Si－Ge |
Si/Si1-xGex Heterojunction Bipolar Transistors |
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| Luo Haoping and Cai JinhuaCentral Institute,Huajing Electronic Group Corf. ,Wuxi,Jiangsu. Si/Si1-xGex Heterojunction Bipolar Transistors[J]. Microelectronics, 1993, 23(2): 27-32 |
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| Authors: | Luo Haoping Cai JinhuaCentral Institute Huajing Electronic Group Corf. Wuxi Jiangsu |
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| Affiliation: | Luo Haoping and Cai JinhuaCentral Institute,Huajing Electronic Group Corf. 214035,Wuxi,Jiangsu |
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| Abstract: | An overview of the worldwide development of Si/Si1-xGex heterojunotion bipolar transistors (HBT's)is made ia the paper. The property and superiority of the device are described. The manufacturing technologies and equipments for Si/Si1-xGex HBT's are examined, and the application prospects are viewed. |
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| Keywords: | HBT Si1-xGex High frequency |
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