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0.9-V DSP blocks: a 15-ns 4-k SRAM and a 45-ns 16-bmultiply/accumulator
Authors:Hallmark   J. Shurboff   C. Ooms   B. Lucero   R. Abrokwah   J. Jenn-Hwa Huang
Affiliation:Phoenix Corp. Res. Lab., Motorola Inc., Tempe, AZ ;
Abstract:4-k SRAM and 16-b multiply/accumulate DSP blocks have been designed and fabricated in complementary heterostructure GaAs. Both circuits operate from 1.5 V to below 0.9 V. The SRAM uses 28,272 transistors in an area of 2.44 mm2. Cell size is 278 μm 2 at 1.0-μm gate length. Measured results show an access delay of 5.3 ns at 1.5 V and 15.0 ns at 0.9 V. At 0.9 V, the power dissipated is 0.36 mW. The CGaAs multiplier uses a 16-b modified Booth architecture with a 3-way 40-b accumulator. The multiplier uses 11,200 transistors in an area of 1.23 mm2. Measured delay is 19.0 ns at 1.5 V and 44.7 ns at 0.9 V. At 0.9 V, current is less than 0.4 mA
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