Structural modification of semiconductor optical amplifiers for wavelength division multiplexing systems

In this paper, the semiconductor optical amplifier is analyzed for in-line and pre-amplifier for wavelength division multiplexing (WDM) transmission having minimum crosstalk and power penalty with sufficient gain. It is evaluated that the cross gain saturation of the SOA can be reduced by settling crosstalk at lower level and also minimizing the power penalty by slight increase in the confinement factor. At an optimal confinement factor of 0.41069, high amplification is obtained up to saturation power of 20.804 mW. For this confinement factor, low crosstalk of ?9.63 dB and amplified spontaneous emission noise power of 119.4 μW are obtained for ?15 dBm input signal. It has been demonstrated for the first time that twenty channels at 10 Gb/s WDM can transmit up to 5600 km by use of this optimization. In this, cascading of in-line SOA is done at the span of 70 km for return zero differential phase shift keying modulation format with the channel spacing of 100 GHz. The optical power spectrum and clear eye are observed at the transmission distance of 4340 and 5600 km in RZ-DPSK system. The bit error rate for all channels increases more than 10^?10 with the increase in launched input power.