| 高频控制开关用沟槽MOSFET的研究 |
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| 引用本文： | 王翠霞,许维胜,谢福渊,陈炬,吴启迪.高频控制开关用沟槽MOSFET的研究[J].半导体技术,2009,34(3). |
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| 作者姓名： | 王翠霞 许维胜 谢福渊 陈炬 吴启迪 |
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| 作者单位： | 同济大学,上海,200092;FORCE,MOS技术有限公司,中国台北000300 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 高频控制开关用功率器件要同时具备极低的导通电阻和栅漏电荷值,从而降低导通损耗和开关损耗.基于器件与工艺模拟软件TsupremⅣ和Medici,研究了工艺参数和设计参数对沟槽MOSFET器件击穿电压、比导通电阻和栅漏电荷的影响,优化设计了耐压30 V的开关用沟槽MOSFET器件.对栅极充电曲线中平台段变倾斜的现象,运用沟道长度调制效应给出了解释.
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| 关 键 词： | 沟槽MOSFET 器件优值 沟道长度调制效应 栅-漏电荷 |
Research on Trench MOSFET for High-Frequent Control Switch |
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| Wang Cuixia,Xu Weisheng,Xie Fuyuan,Chen Ju,Wu Qidi.Research on Trench MOSFET for High-Frequent Control Switch[J].Semiconductor Technology,2009,34(3). |
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| Authors: | Wang Cuixia Xu Weisheng Xie Fuyuan Chen Ju Wu Qidi |
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| Affiliation: | 1.Tongji University;Shanghai 200092;China;2.Force MOS Technology Co.;Ltd.;Taipei 000300;China |
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| Abstract: | The power device used as high frequent control switch requires lower on-resistance and lower gate-drain charge to deduce the conduction loss and switch loss.Based on TCAD of Tsuprem IV and Medici,the effects of the process and design parameters on the performance(BV,Ron,sp and Qgd)of power trench MOSFET were investigated,and the figure of merit of 30 V n-channel trench MOSFET was optimized.The phenomena that the mesa stage was declining in the gate charge curve was explanted by the effect of the channel len... |
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