Electroluminescent properties of heterostructures with GaInNas quantum wells

GaInNAs quantum wells were grown by metal-organic vapor-phase epitaxy. In order to improve the optical properties, the GaNAs barriers were incorporated on both sides of the quantum well; these barriers compensated the elastic stresses. Characteristics of the optical transitions were assessed from the measurements of photoluminescence and photocurrent. In order to fabricate light-emitting diodes, nonalloyed ohmic contacts based on heavily δ-doped layers were used. Electroluminescence was observed at a wavelength of ～1.2 μm at temperatures of 77 and 300 K; the electroluminescence intensity depended linearly on the injection current if the latter exceeded a certain threshold value.