In Situ Comparison of Si/High- $kappa$ and $hbox{Si}/ hbox{SiO}_{2}$ Channel Properties in SOI MOSFETs |
| |
Authors: | Loan Pham-Nguyen Fenouillet-Beranger C Vandooren A Skotnicki T Ghibaudo G Cristoloveanu S |
| |
Affiliation: | Lab. d'Hyperfreq. et Caracterisation, Inst. de Microelectron., Electromagn. et Photonique, Grenoble, France; |
| |
Abstract: | Detailed measurements of front- and back-channel characteristics in advanced SOI MOSFETs (ultrathin Si film, high-kappa, metal gate, and selective epitaxy of source/drain) are used to reveal and compare the transport properties at the corresponding Si/high- kappa (HfO2 or HfSiON) and Si/SiO2 interfaces. Low-temperature operation magnifies the difference between these two interfaces in terms of carrier mobility, threshold voltage, and subthreshold swing. As compared with Si/SiO2, the low-field mobility is lower at the Si/high-kappa interface and increases less rapidly at low temperature, reflecting additional scattering mechanisms governed by high-kappa and neutral defects. |
| |
Keywords: | |
|
|