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Integration of SiOC air gaps in copper interconnects |
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| Authors: | L G Gosset V Arnal Ph Brun M Broekaart C Monget N Casanova M Rivoire J -C Oberlin J Torres |
| Affiliation: | a Philips Semiconductors Crolles R&D, 860 Rue Jean Monnet, 38920, Crolles, France b STMicroelectronics, 850 Rue Jean Monnet, 38926, Crolles Cedex, France c CEA-Leti CCMC, 17 Rue des Martyrs, 38054, Grenoble Cedex 9, France |
| Abstract: | The formation of air gaps by means of a non-conformal chemical vapor deposition (CVD) on patterned wafers was successfully demonstrated using SiOC (K=2.9) as inter-level metal dielectric. This paper presents the results on physical characterization and electrical performance evaluation of integrated SiOC air gaps in a three-metal level Cu/SiOC interconnect module. The influence of the air gaps shape on parasitic coupling capacitance between copper lines was also discussed in accordance with mask design rules and processing steps. |
| Keywords: | Air gap Ultra-low K PECVD dielectrics Copper interconnect Dual damascene architecture |
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