Comparison of Electron Transmittances and Tunneling Currents in an Anisotropic TiNx/HfO2/SiO2/p-Si(100) Metal-Oxide-Semiconductor (MOS) Capacitor Calculated Using Exponential- and Airy-Wavefunction Approaches and a Transfer Matrix Method期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Comparison of Electron Transmittances and Tunneling Currents in an Anisotropic TiNx/HfO2/SiO2/p-Si(100) Metal-Oxide-Semiconductor (MOS) Capacitor Calculated Using Exponential- and Airy-Wavefunction Approaches and a Transfer Matrix Method

Authors:	Fatimah A. Noor Mikrajuddin Abdullah Sukirno Khairurrijal

Affiliation:	Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132, Indonesia;Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132, Indonesia;Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132, Indonesia;Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132, Indonesia

Abstract:

Keywords:	Airy wavefunction anisotropic MOS exponential wavefunction transfer matrix method transmittance tunneling current

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