| In_(1-x)Ga_xAs_yP_(1-y)/GaAs应变量子阱中电子和空穴能带的组分调制1 |
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| 引用本文： | 张院生,郭子政,陈玉和.In_(1-x)Ga_xAs_yP_(1-y)/GaAs应变量子阱中电子和空穴能带的组分调制1[J].信息记录材料,2009,10(2). |
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| 作者姓名： | 张院生 郭子政 陈玉和 |
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| 作者单位： | 1. 内蒙古师范大学,物理与电子信息学院,呼和浩特,010022;集宁师范高等专科学校,物理系,乌兰察布市,012000
2. 内蒙古师范大学,物理与电子信息学院,呼和浩特,010022 |
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| 基金项目： | 国家自然科学基金，内蒙古师范大学研究生科研创新基金 |
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| 摘 要： | 本文采用模型固体理论计算了In1-xGaxAsyP1-y/GaAs应变量子阱中电子和空穴的能带结构,研究了组分对能带的调制作用.结果表明,In1-xGaxAsyP1-y/GaAs量子阱的能带类型及带隙依赖于阱材料In1-xGaxAsyP1-y的组分。当y=1.0,x在0~1.0范围时,量子阱In1-xGaxAsyP1-y/GaAs的能带为类型Ⅰ;当y=0.6,x在0.32~1.0范围时,量子阱的能带为类型Ⅱ。即通过调整阱材料组分,可以方便实现这种量子阱的能带转型(即类型I-类型Ⅱ的转变)。
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| 关 键 词： | 四元混晶 量子阱 组分 能带 应变 |
Tuning of the band lineups of the In_(1-x)Ga_xAs_yP_(1-y)/GaAs strained quantum wells by the variational concentration |
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| ZHANG Yuan-sheng,GUO Zi-zheng,CHEN Yu-he.Tuning of the band lineups of the In_(1-x)Ga_xAs_yP_(1-y)/GaAs strained quantum wells by the variational concentration[J].Information Recording Materials,2009,10(2). |
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| Authors: | ZHANG Yuan-sheng GUO Zi-zheng CHEN Yu-he |
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| Affiliation: | 1.College of Physics and Electronic Informition;Inner Mongolia Normal University;Huhhot 010022;China;2.Department of Physics;Jining Normal College;Wulanchabu 012000;China |
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| Abstract: | The band profiles of In1-xGaxAsyP1-y single quantum wells confined by GaAs barriers are investigated using the model solid theory under considering the effect of strain.The band lineups for electrons and holes are tuned by changing Ga concentration x and As concentration y in the well.The results indicate that type of band alignment and energy gaps depend on quantum-well compositions.In1-xGaxAsyP1-y(y=1.0,x :0～1.0)quantum wells with GaAs barriers show type-Ⅰband alignment,while In1-xGaxAsyP1-y(y=0.6,x :0.32～1.0)quantum wells with GaAs barriers exhibit a type-Ⅱband lineup.So the variety of concentration can expediently carry out type-Ⅰto type-Ⅱtransition for In1-xGaxAsyP1-yquantum wells with GaAs barriers. |
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| Keywords: | quaternary mixed crystal quantum wells composition band lineups strained |
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