An a-Si:H/a-Si,Ge:H bulk barrier phototransistor with a-SiC:Hbarrier enhancement layer for high-gain IR optical detector |
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| Authors: | Hwang S-B Fang YK Chen K-H Liu C-R Hwang J-D Chou M-H |
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| Affiliation: | VLSI Technol. Lab., Nat. Cheng Kung Univ., Tainan ; |
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| Abstract: | The design and fabrication of a high-gain amorphous silicon/amorphous silicon germanium (a-Si:H/a-Si,Ge:H) bulk barrier phototransistor for infrared light detection applications are reported. The a-Si,Ge:H material featured a lower energy gap and is suitable for the absorption of longer wave light, but it also leads to a low breakdown voltage and high dark current. An additional a-SiC:H thin-film layer was used at the collector/base interface in the conventional amorphous bulk barrier phototransistor to enhance the function of the bulk barrier and obtain high optical gain |
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