DC characteristics and stability behaviour of high-speed Si/SiGe HBTs with undoped SiGe spacer between base and collector |
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| Authors: | Schreiber H-U Albers JN |
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| Affiliation: | Ruhr Univ. Bochum, Germany; |
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| Abstract: | The quality of MBE-grown Si/SiGe heterojunction bipolar transistors (HBTs) was improved by inserting a well-defined undoped SiGe layer between the neutral base and the collector. The DC characteristics and the long-term stability of these non-selfaligned devices proved to be excellent, and the transit frequency reached 33 GHz (V/sub CB/=1 V). Those features are essential preconditions for future application in high-speed ICs.<> |
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