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Enhanced Performance of Self‐Assembled Monolayer Field‐Effect Transistors with Top‐Contact Geometry through Molecular Tailoring,Heated Assembly,and Thermal Annealing |
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| Authors: | Nathan Cernetic Tobias Weidner Joe E. Baio Hao Lu Hong Ma Alex K.‐Y. Jen |
| Affiliation: | 1. Department of Materials Science and Engineering, Box 352120, University of Washington, Seattle, WA, USA;2. Max Planck Institute for Polymer Research, Mainz, Germany;3. School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR, USA;4. Department of Chemistry, Box 351700, University of Washington, Seattle, WA, USA |
| Abstract: | Low‐voltage self‐assembled monolayer field‐effect transistors (SAMFETs) that operate under an applied bias of less than ?3 V and a high hole mobility of 10?2 cm2 V?1 s?1 are reported. A self‐assembled monolayer (SAM) with a quaterthiophene semiconducting core and a phosphonic acid binding group is used to fabricate SAMFETs on both high‐voltage (AlOx/300 nm SiO2) and low‐voltage (HfO2) dielectric platforms. High performance is achieved through enhanced SAM packing density via a heated assembly process and through improved electrical contact between SAM semiconductor and metal electrodes. Enhanced electrical contact is obtained by utilizing a functional methylthio head group combined with thermal annealing post gold source/drain electrode deposition to facilitate the interaction between SAM and electrode. |
| Keywords: | hafnium oxide low voltage samfet phosphonic acid self‐assembled monolayer |