Electrical properties of isotype N+-GaSb/n0-GaInAsSb/N+-GaAlAsSb type-II heterojunctions |
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Authors: | M. A. Ahmetoglu I. A. Andreev E. V. Kunitsyna M. P. Mikhailova Yu. P. Yakovlev |
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Affiliation: | (1) Department of Physics, Uludag University, 16059 Gorukle, Bursa, Turkey;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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Abstract: | Band diagrams and current-voltage and capacitance-voltage characteristics of isotype N +-GaSb/n0-GaInAsSb/N +-GaAlAsSb heterostructures have been studied. Dark-current flow mechanisms have been analyzed. It is shown that a staggered type-II heterojunction can behave as a Schottky diode and its current-voltage characteristics exhibit rectifying properties over the entire temperature range 90–300 K. The thermionic-emission current predominates at high temperatures and low voltages. This current is due to thermal excitation of electrons from GaInAsSb to GaSb over the barrier at the heterointerface. A comparison of the relevant theoretical and experimental data confirmed that the tunneling charge transport mechanism plays the key role at low temperatures under both forward and reverse biases. |
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