| 微纳米CMOS VLSI电路可靠性仿真与设计 |
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| 引用本文： | 罗俊,郝跃,秦国林,谭开洲,王健安,胡刚毅,许斌,刘凡,黄晓宗,唐昭焕,刘勇. 微纳米CMOS VLSI电路可靠性仿真与设计[J]. 微电子学, 2012, 0(2): 255-260 |
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| 作者姓名： | 罗俊 郝跃 秦国林 谭开洲 王健安 胡刚毅 许斌 刘凡 黄晓宗 唐昭焕 刘勇 |
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| 作者单位： | 中国电子科技集团公司第二十四研究所;西安电子科技大学微电子学院;模拟集成电路重点实验室 |
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| 摘 要： | 介绍了CMOS VLSI的可靠性建模和仿真技术的发展历史、相应的仿真工具、失效机理等效电路和算法,重点总结了当前最新的CMOS超大规模集成电路可靠性建模仿真技术,为促进我国集成电路可靠性设计水平起到积极的作用。
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| 关 键 词： | 微纳米CMOS 超大规模集成电路 可靠性建模 可靠性仿真 |
Micro-Nanometer CMOS VLSI Circuit Reliability Modeling,Simulation and Design |
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| LUO Jun,HAO Yue,QIN Guolin,TAN Kaizhou,WANG Jian’an,HU Gangyi,XU Bin,LIU Fan,HUANG Xiaozong,TANG Zhaohuan,LIU Yong. Micro-Nanometer CMOS VLSI Circuit Reliability Modeling,Simulation and Design[J]. Microelectronics, 2012, 0(2): 255-260 |
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| Authors: | LUO Jun HAO Yue QIN Guolin TAN Kaizhou WANG Jian’an HU Gangyi XU Bin LIU Fan HUANG Xiaozong TANG Zhaohuan LIU Yong |
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| Affiliation: | 1(1.Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp.,Chongqing 400060,P.R.China; 2.School of Microelectronics,Xidian University,Xi’an 710071,P.R.China; 3.Science and Technology on Analog Integrated Circuit Laboratory,Chongqing 400060,P.R.China) |
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| Abstract: | An overview was made on reliability modeling and simulation of CMOS VLSI circuits.The evolution history,simulation tools,failure mechanism equivalent circuits and algorithms were described.Latest development of technologies for reliability modeling and simulation of CMOS VLSI was summarized in particular.And finally,suggestions were made to improve reliability design level of domestic IC designers. |
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| Keywords: | Micro-nanometer CMOS VLSI Reliability modeling Reliability simulation |
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