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化学气相渗(CVI)碳化硅工艺研究
引用本文:刘文川,魏永良.化学气相渗(CVI)碳化硅工艺研究[J].高技术通讯,1995,5(4):36-40.
作者姓名:刘文川  魏永良
作者单位:中国科学院金属研究所
摘    要:对均热法、热梯度法和压差-温度梯度法三种化学相渗SiC工艺进行了研究,结果表明:三种方法制备周期依次缩短。均热法适合制备形状复杂的样品,提高沉积效率靠增大沉积炉和多放样品来实现,整个过程受气体自由扩散所控制,热梯度法适合制备形状简单、规则的薄壁试样,每炉只能做一个,过程主要受样品内外温度梯度所控制,用该法可以制备出成分连续变化的的功能梯度材料;压差-温度梯度法适合制备板状、圆筒状厚壁样品,过程受样

关 键 词:化学气相渗  CVI  碳化硅  工艺  渗碳

Study on CVI Process of SiC
Liu Wenchuan, Wei Yongliang, Ji Rui, Sun Shoujin, Liu Min, Wang Zuoming.Study on CVI Process of SiC[J].High Technology Letters,1995,5(4):36-40.
Authors:Liu Wenchuan  Wei Yongliang  Ji Rui  Sun Shoujin  Liu Min  Wang Zuoming
Abstract:The fabrication processes of carbon fiber reinforced SiC composites by CVI methods includingisothermal, thermal-gradient and pressure-temperature gradient have been described in this paper.CVIprocesses induce highly controlled reactions between vapor-phase reactants within hermetic chambers.Inisothermal process and thermal-gradient process the CVD gases diffuse into the preform,while in pressure-temperature gradient process the CVD gases are forced into the preform by a pressure gradient.Theprocessing cycles were successively reduced.
Keywords:Isothermal process  Thermal-gradient process  Pressure-temperature gradient process  
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