| 一种非对称射频开关芯片的设计 |
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| 引用本文： | 朱红卫,周天舒,刘国军,李丹,胡冠斌. 一种非对称射频开关芯片的设计[J]. 固体电子学研究与进展, 2012, 32(2): 135-140 |
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| 作者姓名： | 朱红卫 周天舒 刘国军 李丹 胡冠斌 |
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| 作者单位： | 上海华虹NEC电子有限公司,上海,201206 |
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| 摘 要： | 采用非对称结构和双悬浮技术设计了射频开关芯片,测试结果表明,工作频率为2.4GHz的射频开关,在发射模式下,插损为-1.18dB,隔离度为-31.88dB,在接收模式下,插损为-1.48dB,隔离度为-25.08dB,发射时P1dB大于22dBm,接收时为14dBm。由于采用串并结构,极大地增加了隔离度,这种高性能的收发开关的实现主要得益于P阱、深N阱的双悬浮技术,还有堆叠电路结构的应用,同时堆叠结构的分压效果使得通过增加堆叠个数可以进一步提高处理大摆幅信号的能力。
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| 关 键 词： | 射频开关 WiFi应用 2.4GHz 互补金属氧化物半导体工艺 |
Design of a Non-symmetry RF Switch Chip |
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| ZHU Hongwei , ZHOU Tianshu , LIU Guojun , LI Dan , HU Guanbin. Design of a Non-symmetry RF Switch Chip[J]. Research & Progress of Solid State Electronics, 2012, 32(2): 135-140 |
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| Authors: | ZHU Hongwei ZHOU Tianshu LIU Guojun LI Dan HU Guanbin |
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| Affiliation: | (Shanghai Hua Hong NEC Electronics Company,Ltd,Shanghai,201206,CHN) |
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| Abstract: | A radio frequency switch circuit is designed using both asymmetry and double floating techniques.The testing results show the insertion loss of-1.18 dB and isolation of-31.88 dB when working in the transmitting mode while insertion loss of-1.48 dB and isolation of-25.08 dB when working in the receiving mode.The P1dB is great than 22 dBm in the transmitting mode while 14 dBm in receiving mode.The high performance of NMOS switch is achieved by using the floating of both P well and deep N well and the stack of shunt transistors. |
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| Keywords: | RF switch WiFi application 2.4 GHz CMOS technology |
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