| 高压超结VDMOS结构设计 |
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| 引用本文： | 杨法明,杨发顺,丁召,傅兴华,邓朝勇.高压超结VDMOS结构设计[J].固体电子学研究与进展,2012,32(3):298-303. |
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| 作者姓名： | 杨法明 杨发顺 丁召 傅兴华 邓朝勇 |
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| 作者单位： | 贵州大学理学院电子科学系,贵州省微纳电子与软件技术重点实验室,贵阳,550025 |
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| 基金项目： | 贵州省科学技术基金资助项目，贵州省优秀青年科技人才，贵州省科技创新人才团队，贵州省高层次人才基金资助项目 |
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| 摘 要： | 为改善高压功率VDMOS击穿电压和导通电阻之间的平方率关系,采用超结理论及其分析方法,结合电荷平衡理论,计算了超结VDMOS的理想结构参数,并利用仿真软件SILVACO对超结VDMOS的各个工艺参数(外延厚度,P柱掺杂剂量,阈值电压)进行了优化设计,对器件的正向导通特性和反向击穿特性进行了仿真分析。最终设计了一个击穿电压为815V,比导通电阻为23mΩ.cm2的超结VDMOS。
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| 关 键 词： | 纵向双扩散金属氧化物半导体 超结 电荷平衡 正向导通 反向击穿 |
Design of Hign Voltage Super Junction VDMOS |
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| YANG Faming
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YANG Fashun
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DING Zhao
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FU Xinghua
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DENG Chaoyong.Design of Hign Voltage Super Junction VDMOS[J].Research & Progress of Solid State Electronics,2012,32(3):298-303. |
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| Authors: | YANG Faming YANG Fashun DING Zhao FU Xinghua DENG Chaoyong |
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| Affiliation: | (Department of Electronic Science,College of Science,Guizhou University,Key Laboratory of Micro-nano Electronics and Software Technology of Guizhou Province,Guiyang,550025,CHN) |
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| Abstract: | In order to improve the square rate between breakdown voltage and on-resistance,the ideal device parameters of the super-junction VDMOS are calculated based on the theory of super-junction and the theory of charge balance.Some parameters(epitaxy thickness,P-column implantation dose,threshold voltage) are optimized by the SILVACO software.Forward conduction and reverse breakdown are simulated.Finally,the super-junction VDMOS with breakdown voltage of 815 V and specific on-resistance of 23 mΩ·cm2 are realized. |
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| Keywords: | VDMOS super-junction charge balance forward conduction reverse breakdown |
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