| 对拥有结终端保护的高压4H-SiC PIN二极管的研究 |
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| 引用本文： | 张发生,陈育林.对拥有结终端保护的高压4H-SiC PIN二极管的研究[J].固体电子学研究与进展,2012,32(3):225-229. |
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| 作者姓名： | 张发生 陈育林 |
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| 作者单位： | 中南林业科技大学计算机与信息工程学院,长沙,410004 |
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| 基金项目： | 湖南省科技厅科技项目，校2010年引入人才科研项目 |
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| 摘 要： | 在对4H-SiC高压PIN二极管进行了理论分析的基础上,利用仿真软件ISE10.0对具有结终端保护的高压4H-SiC PIN二极管耐压特性进行了模拟仿真计算,并取得了很多有价值的计算结果。利用平面制造工艺,结合仿真提取的参数,试制了高压4H-SiC PIN二极管。实验测试结果表明,仿真计算的结果与实际样品测试的数据一致性较好,实测此器件击穿电压值已达到1 650V。
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| 关 键 词： | 碳化硅 二极管 结终端 模拟 击穿电压 工艺 |
Study on High Voltage 4H-SiC PIN Diode with Junction Termination Protections |
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| ZHANG Fasheng
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CHEN Yulin.Study on High Voltage 4H-SiC PIN Diode with Junction Termination Protections[J].Research & Progress of Solid State Electronics,2012,32(3):225-229. |
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| Authors: | ZHANG Fasheng CHEN Yulin |
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| Affiliation: | (School of Computer and Information Engineering,Central South University of Forestry and Technology,Changsha,410004,CHN) |
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| Abstract: | In this paper,reverse characteristics of the high voltage 4H-SiC PIN diodes with junction termination protection are simulated using a device simulator ISE10.0 on the basis of the theoretical analysis for high voltage 4H-SiC PIN diodes,and then a lot of valuable results are obtained.The high voltage 4H-SiC PIN diodes with junction termination technique are fabricated according to the simulation analytical parameters by use of planar process.Good consistency between simulation and experimental data is achieved.The results show that the high voltage 4H-SIC PiN diodes with optimized JTE edge termination can accomplish near ideal breakdown voltage of 1 650 V. |
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| Keywords: | silicon carbide diode junction termination extension simulation breakdown voltage process |
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