| 一种金属填充硅通孔工艺的研究 |
| |
| 引用本文： | 肖胜安,程晓华,吴智勇,许升高,季伟,何亦骅. 一种金属填充硅通孔工艺的研究[J]. 固体电子学研究与进展, 2012, 32(2): 180-183 |
| |
| 作者姓名： | 肖胜安 程晓华 吴智勇 许升高 季伟 何亦骅 |
| |
| 作者单位： | 上海华虹NEC电子有限公司,上海,201206 |
| |
| 基金项目： | 国家科技重大专项支持项目 |
| |
| 摘 要： | 硅通孔(Through silicon via)的互连技术是3D IC集成中的一种重要工艺。报道了一种高深宽比的垂直互连穿透硅通孔工艺,其通孔的深宽比达到50以上;研究了利用钨填充硅通孔的一些关键工艺,包括阻挡层淀积工艺和钨填充工艺,分析了不同填充工艺所造成的应力的变化。最后获得了一种深宽比达到58∶1的深硅通孔无缝填充。
|
| 关 键 词： | 硅通孔 金属钨(W) 覆盖率 无缝填充 |
Study on Metal Filled Through Silicon Via Process |
| |
| XIAO Shengan , CHENG Xiaohua , WU Zhiyong , XU Shenggao , JI Wei , HE Yihua. Study on Metal Filled Through Silicon Via Process[J]. Research & Progress of Solid State Electronics, 2012, 32(2): 180-183 |
| |
| Authors: | XIAO Shengan CHENG Xiaohua WU Zhiyong XU Shenggao JI Wei HE Yihua |
| |
| Affiliation: | (Shanghai HuaHong NEC Electronics Company,Limited,Shanghai,201206,CHN) |
| |
| Abstract: | Through silicon via(TSV) is a important technique in interconnection of 3D IC integration.In this paper,a process to realize the TSV with high aspect ratio is presented.The aspect ratio of the TSV is higher than 50∶1.Some key processes including barrier layer deposition,tungsten(W) deposition were studied.The impact on stress of different processes was analyzed.A seamless W filled TSV was obtained in which the aspect ratio of via reached 58∶1. |
| |
| Keywords: | TSV tungsten(W) coverage seamless filling |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
