| 二氧化钒薄膜退火特性研究 |
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| 引用本文： | 牟永强,冯浩,梁耀廷,崔敬忠. 二氧化钒薄膜退火特性研究[J]. 真空与低温, 2009, 15(1): 21-24 |
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| 作者姓名： | 牟永强 冯浩 梁耀廷 崔敬忠 |
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| 作者单位： | 兰州物理研究所,表面工程技术国家级重点实验室,甘肃,兰州,730000 |
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| 摘 要： | 用磁控反应溅射法加退火工艺在石英玻璃上制备出具有相变特性的二氧化钒薄膜，通过XRD、SEM和波长200～2500nm的光学透过率的测试对薄膜的结构和特性进行分析，研究退火对薄膜的结构和光电特性的影响。
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| 关 键 词： | 二氧化钒 薄膜 电学特性 光学透过率 |
CHARACTERIZATION OF VANADIUM DIOXIDE THIN FILMS BY ANNEALING |
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| MOU Yong-qiang,FENG Hao,LIANG Yao-ting,CUI Jing-zhong. CHARACTERIZATION OF VANADIUM DIOXIDE THIN FILMS BY ANNEALING[J]. Vacuum and Cryogenics, 2009, 15(1): 21-24 |
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| Authors: | MOU Yong-qiang FENG Hao LIANG Yao-ting CUI Jing-zhong |
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| Affiliation: | (National Key Lab. of Surface Engineering, Lanzhou Institute of Physics, Lanzhou 730000, China) |
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| Abstract: | Vanadium dioxide thin films on quartz glass have been prepared by reactive magnetron sputtering methods and annealing process. Structural and electrical-optical properties have been characterized by XRD, SEM, resistance and optics transmittance measurements in wavelength between 200-2 500 nm. Influence of annealing on thin film properties was given. |
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| Keywords: | Vanadium dioxide thin film electrical property optical transmittance |
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