Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes |
| |
Authors: | Wonseok Lee Jae Limb Jae-Hyun Ryou Dongwon Yoo Theodore Chung Russell D Dupuis |
| |
Affiliation: | (1) Center for Compound Semiconductors, School of Electrical and Computer Engineering Georgia Institute of Technology, 30332 Atlanta, GA |
| |
Abstract: | We investigated the electrical and structural qualities of Mg-doped p-type GaN layers grown under different growth conditions
by metalorganic chemical vapor deposition (MOCVD). Lower 300 K free-hole concentrations and rough surfaces were observed by
reducing the growth temperature from 1,040°C to 930°C. The hole concentration, mobility, and electrical resistivity were improved
slightly for Mg-doped GaN layers grown at 930°C with a lower growth rate, and also an improved surface morphology was observed.
In0.25Ga0.75N/GaN multiple-quantum-well light emitting diodes (LEDs) with p-GaN layers grown under different conditions were also studied.
It was found from photoluminescence studies that the optical and structural properties of the multiple quantum wells in the
LED structure were improved by reducing the growth temperature of the p-layer due to a reduced detrimental thermal annealing
effect of the active region during the GaN:Mg p-layer growth. No significant difference in the photoluminescence intensity
depending on the growth time of the p-GaN layer was observed. However, it was also found that the electroluminescence (EL)
intensity was higher for LEDs having p-GaN layers with a lower growth rate. Further improvement of the p-GaN layer crystalline
and structural quality may be required for the optimization of the EL properties of long-wavelength (∼540 nm) green LEDs. |
| |
Keywords: | Light emitting diode (LED) gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD) InGaN |
本文献已被 SpringerLink 等数据库收录! |