| SDD定义的InP DHBT大信号模型 |
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| 引用本文： | 曹玉雄,金智,葛霁,苏永波,刘新宇. SDD定义的InP DHBT大信号模型[J]. 半导体学报, 2009, 30(12): 124006-5 |
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| 作者姓名： | 曹玉雄 金智 葛霁 苏永波 刘新宇 |
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| 摘 要： | A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors （DHBTs） is implemented as a seven-port symbolically defined device （SDD） in Agilent ADS. The model accounts for most physical phenomena incluuing the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.
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| 关 键 词： | 异质结双极晶体管 大信号模型 象征意义 定义 双异质结 物理现象 自热效应 直流测量 |
| 收稿时间： | 2009-06-05 |
| 修稿时间： | 2009-07-13 |
A symbolically defined InP double heterojunction bipolar transistor large-signal model |
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| Cao Yuxiong,Jin Zhi,Ge Ji,Su Yongbo and Liu Xinyu. A symbolically defined InP double heterojunction bipolar transistor large-signal model[J]. Chinese Journal of Semiconductors, 2009, 30(12): 124006-5 |
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| Authors: | Cao Yuxiong Jin Zhi Ge Ji Su Yongbo Liu Xinyu |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena including the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs. |
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| Keywords: | InP DHBT large-signal model SDD |
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