TiO2/CuInS2复合纳米棒阵列的制备及其光电性能

采用两步溶剂热法在氧化氟锡(FTO)导电玻璃基底上制备了CuInS2敏化TiO2纳米棒阵列复合薄膜光阳极.利用X射线衍射仪(XRD)和扫描电子显微镜(SEM)表征了复合阵列薄膜的晶体结构和表面形貌,同时采用紫外可见吸收分光光度计(UV-Vis)及光电流电压(I-V)曲线研究了CuInS2敏化TiO2纳米阵列薄膜的光学及光电化学性质.研究结果表明,TiO2纳米棒阵列薄膜被CuInS2敏化后在可见光区的吸收有明显的增强.在模拟太阳光照射下(100 mW/cm2),利用这种复合薄膜作为光阳极组装的量子点敏化太阳能电池的开路电压为0.29 V,短路电流密度为0.15 mA/cm2,具有一定的光电转换能力.

Fabrication of CuInS2 Sensitized TiO2 Nanorod Arrays for Photovoltaic Devices

Vertically oriented single-crystalline TiO2 nanorod arrays sensitized with CuInS2 quantum dots(QDs) were synthesized directly on fluorine-doped tin oxide(FTO) substrates by two-step solvothermal method.The as-prepared nanostructure assembly was characterized by X-ray diffraction(XRD) and scanning electron microscope(SEM).The results indicated that CuInS2 QDs were uniformly covered on the surface of the single-crystalline TiO2 nanorods.Ultraviolet visible(UV-Vis) absorption spectra showed that the absorbance of the TiO2/CuInS2 nanocomposite film was extended to the visible region.Under illumination of simulated AM 1.5 G(100 mW/cm2) at one sun intensity,the QD sensitized solar cells(QD-SSCs) assembled with FTO/TiO2/CuInS2 photoelectrodes exhibited an open-circuit voltage of 0.29 V and a short-circuit current density of 0.15 mA/cm2.