钨掺杂二氧化钒薄膜的THz波段相变性能的研究(英文)

通过溶胶–凝胶法制备纯的VO2和W掺杂的VO2薄膜,并且进行了XPS、AFM和XRD的分析与表征,并观察了其微观形貌和结构.同时研究了VO2和W掺杂VO2在红外光谱(λ=4μm)和THz(0.3~1.0 THz)区域的金属–绝缘转变性能.结果表明:室温下W掺杂的VO2薄膜在红外和THz区域的初始透过率都比纯的VO2薄膜低.在THz波段,W掺杂的VO2表现出更低的相变温度.同时在VO2和W掺杂VO2相变过程中,观察到了金属–绝缘转变和结构转变的现象,W掺杂VO2具有明显的峰位偏移现象.

Study on Phase Transition Property of Tungsten-doped Vanadium Dioxide Thin Film at Terahertz Range

Vanadium dioxide and tungsten-doped (W-doped) vanadium dioxide thin films deposited by aqueous Sol-Gel method were characterized with several different techniques (i.e. X-ray photoelectron spectroscope, atomic force microscope, X-ray diffraction), to determine their morphology and microstructure. Their metal-to-insulator (MIT) phase transition behavior in infrared spectral region (λ=4 μm) and terahertz (THz) spectral region (0.3–1.0 THz) were observed respectivele. The results demonstrate that the transmittance of W-doped VO 2 film at room temperature is visibly lower than that of undoped VO 2 film in both infrared and terahertz spectral region. The transition temperature of W-doped VO 2 film is also lower than that of undoped VO 2 film in the THz range. The MIT and structural phase transition (SPT) are observed during the phase transition of VO 2 and W-doped VO 2 , and an obvious change of peak position occurs in W-doped VO 2 film.