靶成分和溅射参数对碳化钒薄膜微结构与力学性能的影响

为了提高碳化物靶溅射薄膜的结晶程度和相应的力学性能, 采用等化学计量比的VC靶(n(C):n(V)=1:1)和富V的VC靶(n(C):n(V)=0.75:1)通过磁控溅射方法制备了一系列VC薄膜, 利用EDS、XRD、SEM和微力学探针研究了靶成分、溅射气压和基片温度对薄膜化学成分、微结构和力学性能的影响. 结果表明, 对于等化学计量比的VC靶, 在Ar气压为2.4~3.2 Pa的范围内可获得结晶程度和硬度较高的VC薄膜, 其最高硬度为28 GPa. 而采用富V的VC靶时, 在较低的Ar气压(0.6~1.8 Pa)下就可获得结晶程度高的VC薄膜, 其硬度达到31.4 GPa. 可见, 相对于溅射参数的Ar气压和基片温度, 靶的成分对于所获薄膜的成分、微结构和力学性能影响更显著, 因而适当提高靶中金属组分的含量是获得结晶良好且具高硬度的VC薄膜更为有效的途径.

Effect of Target Composition and Sputtering Parameters on Microstructure and Mechanical Properties of Vanadium Carbide Films

To improve the crystalinity and mechanical properties of the films sputtering with carbide target,a series of vanadium carbide films were prepared by magnetron sputtering in an argon atmosphere using the stoichiometric VC target(n(C):n(V)=1:1) and substoichiometric VC target(n(C):n(V)=0.75:1).Energy-dispersive X-ray spectroscopy,X-ray diffraction,scanning electron microscopy and nanoindentation were employed to characterize their composition,microstructure and mechanical properties.The results show that for the VC target(n(C):n(V)=1:1),only when the Ar pressure is between 2.4 Pa and 3.2 Pa,the films can obtain fine crystallized structure and attain high hardness,of which the highest hardness is 28 GPa.For the V-rich VC target,fine crystallized films and high hardness(31.4 GPa) could be gained in lower Ar pressure(0.6 1.8 Pa).Compared with argon pressure and substrate temperature,target composition is the main factor of the film composition,microstructure and mechanical properties,thus proper increasing the content of metal component of the target is a more effective way to get VC films with good crystalinity and high hardness.