| 4H-SiC同质外延中的缺陷 |
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| 引用本文： | 李哲洋,刘六亭,董逊,张岚,许晓军,柏松. 4H-SiC同质外延中的缺陷[J]. 电子工业专用设备, 2005, 34(11): 62-64,74 |
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| 作者姓名： | 李哲洋 刘六亭 董逊 张岚 许晓军 柏松 |
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| 作者单位： | 南京电子器件研究所,江苏,南京,210016 |
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| 摘 要： | 从实验出发,用LPCVD外延系统在偏向<11-20>方向8°的4H-SiC(0001)Si面衬底上,利用CVD技术进行了4H-SiC同质外延生长。外延后在熔融KOH腐蚀液中进行腐蚀,使用SEM和光学显微镜表征方法探讨了CVD法4H-SiC同质外延中的位错、微管和孪晶等缺陷形貌,并分析其形成机理。
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| 关 键 词： | 4H-SiC LPCVD 同质外延 微管 位错 SEM |
| 文章编号： | 1004-4507（2005）11-0062-03 |
| 收稿时间： | 2005-10-18 |
| 修稿时间： | 2005-10-18 |
Defects in 4H-SiC Homoepitaxy CVD Growth |
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| LI Zhe-yang,LIU Liu-ting,DONG Xun,ZHANG Lan,XU Xiao-jun,BAI Song. Defects in 4H-SiC Homoepitaxy CVD Growth[J]. Equipment for Electronic Products Marufacturing, 2005, 34(11): 62-64,74 |
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| Authors: | LI Zhe-yang LIU Liu-ting DONG Xun ZHANG Lan XU Xiao-jun BAI Song |
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| Abstract: | In this paper, we study the 4H-SiC homoepitaxy growth on 8°off SiC (0 001) substrates using low pressure chemical vapor deposition (LPCVD) method. The epilayers are etched in molten KOH solution. Scanning electron microscope (SEM) is used to study the defects including dislocations, micropipes, twins in the e pilayers. The defect formation mechanism is tentatively given. |
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| Keywords: | 4H-SiC LPCVD SEM |
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