| 新型Sol-Gel技术PZT铁电厚膜的制备及电学性能研究 |
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| 引用本文： | 夏冬林,刘梅冬,曾亦可,李军,黄焱球,刘少波. 新型Sol-Gel技术PZT铁电厚膜的制备及电学性能研究[J]. 无机材料学报, 2001, 16(6): 1156-1160 |
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| 作者姓名： | 夏冬林 刘梅冬 曾亦可 李军 黄焱球 刘少波 |
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| 作者单位： | 华中科技大学电子科学与技术系 武汉 430074 |
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| 基金项目： | 国家高技术研究发展计划新材料领域基金(863-715-002-0100);湖北省基金(99J047) |
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| 摘 要： | 采用新型ｓｏｌ－ｇｅｌ技术在 Ｐｔ／Ｔｉ／ＳiO2/Si基片上制备出了厚度为 ２～６０μｍ的ＰＺＴ铁 电厚膜材料；研究了ＰＺＴ厚膜的结构及其介电、铁电性能．ＸＲＤ谱分析显示，ＰＺＴ厚膜 呈现出纯钙钛矿相结构，无焦绿石相存在．ＳＥＭ电镜照片显示，ＰＺＴ膜厚均匀一致，无裂 纹、高致密．厚度为５０μｍ的ＰＺＴ厚膜的介电常数为８６０，介电损耗为０.０３，剩余极化强度 是２５μＣ／ｃｍ２．矫顽场是４０ｋＶ／ｃｍ.
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| 关 键 词： | PZT厚膜 新型Sol-gel技术 介电性能 铁电性能 |
| 文章编号： | 1000-324(2001)06-1156-05 |
| 收稿时间： | 2000-12-05 |
| 修稿时间： | 2000-12-05 |
Electrical Properties of Thick Lead Zirconate Titanate Films Fabricated Using a New Sol-Gel Processing |
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| XIA Dong-Lin,LIU Mei-Dong,ZENG Yi-Ke,LI Jun,HUANG Yan-Qiu,LIU Shao-Bo. Electrical Properties of Thick Lead Zirconate Titanate Films Fabricated Using a New Sol-Gel Processing[J]. Journal of Inorganic Materials, 2001, 16(6): 1156-1160 |
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| Authors: | XIA Dong-Lin LIU Mei-Dong ZENG Yi-Ke LI Jun HUANG Yan-Qiu LIU Shao-Bo |
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| Affiliation: | Department of Electronic Science and Technology Huazhong University of Science and technology; Wuhan 430074 |
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| Abstract: | Lead zirconate titanate (Pb(Zr0.53Ti0.47)O3, PZT) ferroelectric films 2-60μm in thickness were successfully fabricated on Pt-coated oxidized Si substrates(Pt/Ti/SiO2/Si) by a new sol gel processing. The microstructure and morphology of the prepared PZT thick films were investigated via X-ray diffractometry and scanning electron microscopy techniques. X-ray diffraction patterns taken on these films show single-phase perovskite-type structure, and no pyrochlore phase exists in thick films, and SEM micrographs suggest that the PZT thick films are of high density, crack-free, and uniformity. Dielectric constant of 860, loss tangent of 0.03, remanent polarization of 25μC/cm2, a coercive field of 40kV/cm were measured on 50μm thick films. |
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| Keywords: | ferroelectric thick film lead zirconate titanate (PZT) sol-gel technique dielectric properties ferroelectric properties |
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