The effect of solvent water content on the dielectric properties of Al2O3 films grown by atmospheric pressure mist-CVD |
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Authors: | Dong-Hyun Kim Hyun-Jun Jeong Jozeph Park Jin-Seong Park |
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Affiliation: | 1. Department of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seoul 04763, Republic of Korea;2. Department of Materials Science and Engineering, KAIST, Daejeon, Republic of Korea |
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Abstract: | Aluminum oxide (Al2O3) dielectric layers were grown by a mist-chemical vapor deposition (mist-CVD) process at 300 °C, using solvent mixtures containing acetone and water. As the acetone to water ratio was varied from 9:1 to 7:3, the leakage current of Al2O3 at an electric field of 7 MV/cm2 decreased from 9.0 × 10?7 to 4.4 × 10?10 A/cm2, and the dielectric constant increased from 6.03 to 6.85 with improved hysteresis during capacitance-voltage measurements. Consequently, the most robust Al2O3 films were obtained at an acetone to water ratio of 7:3, with a dielectric constant (κ) close to the ideal value 7.0, and a breakdown field of approximately 9 MV/cm. Thin film transistors (TFTs) incorporating In-Sn-Zn-O (ITZO) as the semiconductor were fabricated with the Al2O3 (7:3) dielectric onto p++-Si substrates. The devices exhibit high electrical performance, with a high field effect mobility of 42.7 cm2V?1s?1, and a small subthreshold swing (S.S.) value of 0.44 V/decade. |
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Keywords: | Mist chemical vapor deposition Aluminum oxide Solution process Atmospheric Thin film transistors(TFTs) |
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