Crystallization of SiC and its effects on microstructure,hardness and toughness in TaC/SiC multilayer films |
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| Authors: | Suxuan Du Kan Zhang Mao Wen Ping Ren Qingnan Meng Yidan Zhang Weitao Zheng |
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| Affiliation: | 1. State Key Laboratory of Superhard Materials, Department of Materials Science, and Key Laboratory of Automobile Materials, MOE, Jilin University, Changchun 130012, People''s Republic of China;2. College of Construction Engineering, Key Lab of Drilling and Exploitation Technology in Complex Conditions, Ministry of Land and Resources, Jilin University, Changchun 130026, People''s Republic of China |
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| Abstract: | A series of TaC/SiC multilayer films with different SiC thicknesses (tSiC) have been prepared by magnetron sputtering and their microstructure, hardness and toughness investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), scanning electron microscopy (SEM) and nanoindentation. Results show that SiC crystallized and grew coherently with TaC layers at low tSiC (≤ 0.8 nm), resulting from the template effect of TaC layers. Maximum hardness and toughness of 46.06 GPa and 4.21 MPa m1/2 were achieved at tSiC = 0.8 nm with good coherent interface. With further increasing of tSiC, SiC layers partially transformed to an amorphous structure and gradually lost their coherent interface, leading to a rapid drop in hardness and toughness. The crystallization of SiC layers and the coherent growth are required to achieve superhardness and high toughness in the TaC/SiC multilayers. |
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| Keywords: | TaC/SiC multilayer films Coherent growth Superhardness Toughness |
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