| Ni掺杂对Cu_3N薄膜结构与性能的影响 |
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| 引用本文： | 陈小松,尹玉丽,张昌印,吴绍彬,杨磊,黄致新. Ni掺杂对Cu_3N薄膜结构与性能的影响[J]. 信息记录材料, 2010, 11(3): 52-55 |
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| 作者姓名： | 陈小松 尹玉丽 张昌印 吴绍彬 杨磊 黄致新 |
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| 作者单位： | 华中师范大学,物理科学与技术学院,武汉,430079 |
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| 基金项目： | 国家大学生创新性实验项目基金 |
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| 摘 要： | 采用射频反应磁控溅射方法在玻璃基底上制备了Ni掺杂Cu3N薄膜,并研究了Ni掺杂对Cu3N的结构、电学性能和光学性能的影响。研究发现:Ni的加入使得Cu3N薄膜的(111)晶面向小角度偏移;随着Ni含量的增加,Cu3N薄膜的电阻率从1450×10-6Ω.cm减小到184×10-6Ω.cm,光学能隙从1.09eV增加到1.52eV。
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| 关 键 词： | Cu3N薄膜 Ni掺杂 电学性能 光学能隙 |
Effect of Ni Doping on the Structure and Properties of Copper Nitride thin Films |
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| CHEN Xiao-song,YIN Yu-li,ZHANG Chang-yin,WU Shao-bin,YANG Lei,HUANG Zhi-xin. Effect of Ni Doping on the Structure and Properties of Copper Nitride thin Films[J]. Information Recording Materials, 2010, 11(3): 52-55 |
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| Authors: | CHEN Xiao-song YIN Yu-li ZHANG Chang-yin WU Shao-bin YANG Lei HUANG Zhi-xin |
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| Abstract: | Ni-doped copper nitride films were prepared on glass substrates by reactive radio magnetron sputtering method,and the effect of Ni doping on the structure、the electrical and the optical properties of the thin films were studied.The results show that:the films changes the(111) plane to lesser angles with the addition of Ni;With the increase of Ni-doped content,the electrical resistivity decreases from 1450×10-6Ω·cm to 184×10-6 Ω·cm,and the optical band gap increases from 1.09eV to 1.52eV. |
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| Keywords: | Cu3N thin films Ni-doped resistivity optical band gap |
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