Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD |
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| Authors: | Haiwu Zheng Jianfeng Su Zhuxi Fu Guang Li Xiaoguang Li |
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| Affiliation: | 1. Department of Physics, Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China;2. Institute for Physics of Microsystem, School of Physics and Electronics, Henan University, Kaifeng 475004, China |
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| Abstract: | Cubic SiC (3C-SiC) film has been deposited on Si (1 1 0) substrate by the low pressure chemical vapor deposition (LPCVD) with gas sources of SiH4, C3H8 and carrier gas of H2. The 3C-SiC crystalline film can be confirmed through the observations using reflection high-energy electron diffraction (RHEED) images. The X-ray diffraction (XRD) pattern and the rocking curve indicate that the (1 1 1) plane of SiC film is parallel to the surface of the Si (1 1 0) substrate and the film is of high crystallinity. The results of the field emission scanning electron microscope (FESEM) images show that the film has smooth surface morphology. Transmitted electron diffraction (TED) pattern and high resolution transmission electron microscope (HRTEM) image further confirm the high quality of the film. |
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| Keywords: | Si (1 1 0) 3C-SiC film Surface morphology LPCVD |
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