| 等离子体源增强磁控溅射沉积Al2O3薄膜研究 |
| |
| 引用本文： | 雷明凯,袁力江,张仲麟.等离子体源增强磁控溅射沉积Al2O3薄膜研究[J].无机材料学报,2002,17(4):887. |
| |
| 作者姓名： | 雷明凯 袁力江 张仲麟 |
| |
| 作者单位： | 大连理工大学材料工程系表面工程研究室 大连 116024 |
| |
| 基金项目： | 国家自然科学基金，教育部科学技术研究项目 |
| |
| 摘 要： | 采用电子回旋共振微波等离子体源增强磁控溅射沉积氧化铝薄膜.X射线光电子谱和X射线衍射分析表明,在600℃沉积温度下,Si（100）基片上获得了亚稳的具有化学计量配比成分、面心立方结构的γ-Al2O3薄膜.薄膜的折射率为1.7,与稳定的α-Al2O3体材料相当.
|
| 关 键 词： | 氧化铝薄膜 等离子体源 磁控溅射沉积 折射率 |
| 收稿时间： | 2001-06-11 |
| 修稿时间： | 2001-07-24 |
Al2O3 Films Deposited by Plasma Source Enhanced Magnetron Sputtering |
| |
| LEI Ming-Kai,YUAN Li-Jiang,ZHANG Zhong-Lin.Al2O3 Films Deposited by Plasma Source Enhanced Magnetron Sputtering[J].Journal of Inorganic Materials,2002,17(4):887. |
| |
| Authors: | LEI Ming-Kai YUAN Li-Jiang ZHANG Zhong-Lin |
| |
| Affiliation: | Surface Engineering Laboratory; Department of Materials Engineering; Dalian University of Technology; Dalian 116024; China |
| |
| Abstract: | The aluminium oxide films were deposited on Si(100) substrate by plasma source enhanced magnetron sputtering by using an electron cyclotron resonance (ECR) microwave plasma source and a direct current magnetron sputtering target. X-ray photoelectron spectroscopy (XPS) and glancing angle X-ray diffraction patterns show that the metastable stoichiometric γ-Al2O3 films can be obtained at a higher deposition temperature of 600℃. The refractive index of the films is 1.7, corresponding with that of stable α-Al2O3. |
| |
| Keywords: | aluminium oxide film plasma source magnetron sputtering refractive index |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《无机材料学报》浏览原始摘要信息 |
|
点击此处可从《无机材料学报》下载全文 |
