| 电子束曝光中的邻近效应修正技术 |
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| 引用本文： | 刘明,陈宝钦,张建宏,李友.电子束曝光中的邻近效应修正技术[J].微细加工技术,2000(1):16-20. |
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| 作者姓名： | 刘明 陈宝钦 张建宏 李友 |
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| 作者单位： | 中国科学院微电子中心光掩模实验室,北京100029 |
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| 摘 要： | 邻近效应是指电子在抗蚀剂和基片中的散射引起图形的改变，它严重地影响了图形的分辨率。有多种方法对邻近效应进行修正和剂量调整、图形调整等。我们以ＪＢＸ－５０００ＬＳ为手段，用三种方法：１．图形尺寸修正，１２大小图分类和剂量分配，３图形分层和大小电流混合曝光，对邻近效应进行了修正，均取得较好效果。
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| 关 键 词： | 电子束曝光 邻近效应 集成电路 |
| 文章编号： | 1003-8213(2000)01-0003-05 |
| 修稿时间： | 1999-05-11 |
Proximity Effect Correction Technique in EB Exposure |
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| LIU Ming,CHEN Bao-qin,ZHANG Jian-hong,LI You.Proximity Effect Correction Technique in EB Exposure[J].Microfabrication Technology,2000(1):16-20. |
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| Authors: | LIU Ming CHEN Bao-qin ZHANG Jian-hong LI You |
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| Affiliation: | LIU Ming
,CHEN Bao-qin
,ZHANG Jian-hong
,LI You
;(Photo-Mask Making Lab, Microelectronics R$D Center,Chinese Academy of Science,Beijing 100029,China) |
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| Abstract: | The electron scatter in the resist or the substrate at a significant distance from the incident beam causes pattern variation.This is called proximity effect. Many different schemes have been devised to minimize the proximity effect, such as pattern size correction and dose modulation. We use three methods to correct proximity effect in JBX-5000LS EBL system(1)Pattern size correction, (2)divide large and small pattern as well as shot dose allocation, (3)divide pattern as well as small and large curren mixing exposure. Above different methods work well for different patterns. |
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| Keywords: | Electron beam lithography Proximity effect |
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