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Enhanced performance of GaN-based light-emitting diodes by using a p-InAlGaN/GaN superlattice as electron blocking layer |
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| Authors: | Shuchang Wang Hao Guo Hongquan Yang Min Zhu Liwen Cheng |
| Affiliation: | 1. Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, Jiangsu 210096, China;2. College of Physics Science and Technology, Yangzhou University, Yangzhou, Jiangsu 225002, China |
| Abstract: | The electrical and optical characteristics of GaN-based light-emitting diodes (LEDs) with various kinds of electron blocking layers (EBLs) are analyzed numerically. The results indicate that an enhanced hole injection efficiency and a reduced electron leakage could be achieved with the GaN-based LED where a p-InAlGaN/GaN superlattice (SL) was employed as EBL as compared with the conventional GaN-based LEDs using rectangular p-AlGaN EBL or p-AlGaN/GaN SL EBL. Moreover, it was found that the efficiency droop could be significantly improved at high injection current density for GaN-based LEDs with p-InAlGaN/GaN SL EBL. |
| Keywords: | p-InAlGaN p-InAlGaN/GaN superlattice electron blocking layer GaN-based light-emitting diode |