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Photoconductivity in p-i-n Quantum Well Optical Modulators
Authors:A.J. Vickers  V.R. Wicks  A. Rivers  J. Roberts  P. Mistry
Affiliation:1. Physics Department , University of Essex , Wivenhoe Park, Colchester, CO4 35Q, England;2. Department of Electrical and Electronic Engineering , University College , Gower Street, London, WC1E 6BT, England;3. Department of Electrical Engineering , University of Sheffield , Mappin Street, Sheffield, England
Abstract:Abstract

We have studied the temperature dependence of the current due to photoexcited carriers in p-i-n single quantum-well optical modulators, in order to ascertain the dominant transport mechanisms involved. A model describing the photocurrent is presented which includes the temperature and field dependence of the thermal emission, the tunnelling, the mobility and the recombination rate. A comparison between the experimental results and the model is also presented, outlining the probable transport processes.
Keywords:
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