| 高增益异质结光电晶体管的研制 |
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| 引用本文： | 刘宝林,李克诚. 高增益异质结光电晶体管的研制[J]. 微纳电子技术, 1992, 0(2) |
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| 作者姓名： | 刘宝林 李克诚 |
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| 作者单位： | 机电部第13研究所，机电部第13研究所 石家庄 050051，石家庄 050051 |
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| 摘 要： | 利用液相外延技术研制出高增益InGaAsP/InP异质结光电晶体管(HPT)。入射光波长为1.256μm时,实现直流光增益为88.9,微分光增益为148,光谱响应范围为0.85～1.3μm。在外偏电压小于4V时暗电流小于10nA。
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| 关 键 词： | 光电晶体管 液相外延 异质结 |
Development of High Gain Heterojunction Phototransistor |
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| Liu Baolin,Li Kecheng. Development of High Gain Heterojunction Phototransistor[J]. Micronanoelectronic Technology, 1992, 0(2) |
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| Authors: | Liu Baolin Li Kecheng |
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| Abstract: | High gain InGaAsP/ InP heterojunction phototransistors (HPT) have been fabricated by liquid-phase epitaxy (LPE). The direct-current optical gain of 88.9 and differential optical gain of 148 were measured by using light emitter diode (LED) whose centred wavelength is 1.256μm as light source. The spectral response is in 0.85～1.3μm wavelength range. When the bias voltage is less than 4V, the dark current is less than 10nA. |
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| Keywords: | Phototransistor LPE Heterojunction |
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