Investigation of the defect density in ultra-thin Al<sub>2</sub>O<sub>3</sub> films grown using atomic layer deposition期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Investigation of the defect density in ultra-thin Al₂O₃ films grown using atomic layer deposition

Authors:	Yadong Zhang Dragos SegheteAziz Abdulagatov Zachary GibbsAndrew Cavanagh Ronggui YangSteven George Yung-Cheng Lee

Affiliation:	^a Department of Mechanical Engineering, University of Colorado, Boulder, CO 80309, USA ^b Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309, USA ^c Department of Chemical and Biological Engineering, University of Colorado, Boulder, CO 80309, USA ^d Department of Physics, University of Colorado, Boulder, CO 80309, USA

Abstract:	The film perfection in terms of pinhole defect densities of ultra-thin Al₂O₃ grown by atomic layer deposition (ALD) has been quantitatively characterized. A significant defect density reduction from ~ 1.2 × 10⁵/cm² to ~ 90/cm² was demonstrated for 2 nm-thick Al₂O₃ by using an ALD tungsten (W) buffer layer on the nickel (Ni) substrate. The reason for the defect reduction was attributed to efficient nucleation of ALD Al₂O₃ on ALD W. The effect of the buffer layer becomes less essential as the Al₂O₃ thickness increases, where the substrate surface physical conditions such as particle contamination become the main cause for defects.

Keywords:	Defect Ultra-thin Al₂O₃ Atomic layer deposition Buffer layer Nucleation Electroplating
本文献已被 ScienceDirect 等数据库收录！