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Mechanical and tribological properties of coatings sputtered from SiC target in the presence of CH4 gas
Authors:V. Kulikovsky  V. VorlicekR. Ctvrtlik  P. BohacJ. Suchanek  O. BlahovaL. Jastrabik
Affiliation:
  • a Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Na Slovance 2, 182 21 Prague 8, Czech Republic
  • b Institute for Problems of Materials Science, Academy of Sciences of Ukraine, 3 Krzhyzhanovsky St., 03142 Kiev, Ukraine
  • c Joint Laboratory of Optics of Palacky University and Institute of Physics of Academy of Sciences of the Czech Republic, v.v.i., 17. listopadu 50, 772 07 Olomouc, Czech Republic
  • d Czech Technical University, Faculty of Mechanical Engineering, Department of manufacturing technology, Technicka 4, 166 07 Praha 6, Czech Republic
  • e New Technologies-Research Centre in Westbohemian Region, University of West Bohemia, Plzen, Czech Republic
  • Abstract:Amorphous hydrogen-free silicon carbide (a-SiC) coatings demonstrate good adhesion to different steel substrates, low intrinsic stress and high hardness however show quite high coefficient of friction in comparison with carbon-based coatings. Some addition of carbon to SiC can promote the decrease of friction coefficient.In the present work the amorphous hydrogenated silicon-carbide (a-SiC:H) films with different C/Si ratio were prepared at room temperature using DC magnetron sputtering in two ways: (i) sputtering of silicon target; (ii) sputtering of SiC target, both in the gas mixture of Ar and CH4. In the latter case the films contained less hydrogen at the same C/Si ratio. The mechanical and tribological properties of these films were studied to find their optimum combination.The hardness, elastic modulus (nanoindentation), intrinsic stress (Stoney's formula) and coefficient of friction (pin on disc tribometer) were examined in dependence on the technological parameters, film structure and composition (Raman spectra, electron probe microanalysis). An increase of carbon in the films from 50 to 70 at.% resulted in decrease of hardness and friction coefficient. In the first case (i) the hardness decreased from 13 to10 GPa and in the second case (ii) from 23 to 16 GPa. Thus sputtering of SiC target in the gas mixture of Ar and CH4 allows obtaining at room temperature the films with C/Si > 1 in which relatively high hardness (16-18 GPa) and low friction coefficient (~ 0.15) are combined.
    Keywords:Amorphous SiC films   Sputtering   Hardness   Coefficient of friction   Raman spectra
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