| 溅射制备非晶氮化镓薄膜的光学性能 |
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| 引用本文： | 潘孝军,张振兴,贾璐,李晖,谢二庆.溅射制备非晶氮化镓薄膜的光学性能[J].无机材料学报,2007,22(4):725-728. |
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| 作者姓名： | 潘孝军 张振兴 贾璐 李晖 谢二庆 |
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| 作者单位： | 兰州大学物理科学与技术学院, 兰州 730000 |
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| 摘 要： | 利用直流磁控溅射方法制备了GaN薄膜. X射线衍射及Raman光谱结果表明薄膜样品为非晶结构; 傅立叶红外光谱表明薄膜样品的主要吸收峰为Ga--N键的伸缩振动; 光致发光测试得到了360nm处的紫外发光谱; 测量薄膜样品的紫外-可 见谱, 并利用Tauc公式计算得到样品的光学带隙为3.74eV, 这与光致发光谱得到的结果是一致的.
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| 关 键 词： | 非晶氮化镓 溅射制备 光学性能 |
| 文章编号： | 1000-324X（2007）04-0725-04 |
| 收稿时间： | 2006-7-12 |
| 修稿时间： | 2006-07-12 |
Optical Properties of a-GaN Film Deposited by DC Magnetron Sputtering |
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| PAN Xiao-Jun,ZHANG Zhen-Xing,JIA Lu,LI Hui,XIE Er-Qing.Optical Properties of a-GaN Film Deposited by DC Magnetron Sputtering[J].Journal of Inorganic Materials,2007,22(4):725-728. |
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| Authors: | PAN Xiao-Jun ZHANG Zhen-Xing JIA Lu LI Hui XIE Er-Qing |
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| Affiliation: | School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China |
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| Abstract: | GaN thin films were prepared by direct current (DC) planar magnetron sputtering on Si and SiO$_2$. The films were characterized by X-ray diffraction (XRD), Raman, Fourier Transform Infrared Spectroscopy (FTIR), photoluminescence (PL) and UV-Vis spectra. XRD and Raman spectrum show that the films are amorphous. Fourier infrared absorbance spectrum shows that the main absorbance is Ga-N stretching vibration. 360nm ultraviolet emission is obtained at room temperature. UV-Vis result shows that the optical band gap of the films is 3.74eV, which is consistent with photoluminescence spectrum result. \vspace*{.2cm |
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| Keywords: | amorphous GaN DC sputtering optical properties |
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