| Cu／AI比对P型透明导电铜铝氧薄膜性能的影响 |
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| 引用本文： | 周强 季振国 赵丽娜 陈琛 王超. Cu／AI比对P型透明导电铜铝氧薄膜性能的影响[J]. 半导体光电, 2005, 26(6): 515-518 |
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| 作者姓名： | 周强 季振国 赵丽娜 陈琛 王超 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,浙江杭州310027 |
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| 基金项目： | 国家基础研究发展规划专项资助项目（973）（G20000683）. |
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| 摘 要： | 采用将反应物沉淀后涂层及高温固相反应，在石英玻璃衬底上沉积了Cu／Al原子比不同的P型透明导电铜铝氧化物。XRD分析结果表明，样品的成分中包含黑铜矿结构的CuO、铜铁矿结构的CuAlO2、尖晶石结构的CuAl2O4和刚玉结构的Al2O3；X光能谱（EDAX）测试结果表明，样品中的Cu／Al比例随原料中Cu／Al比的增加而增加；导电类型测试表明，利用本方法制备的样品均是P型；电阻率测试表明，当Cu／Al原子比在1．0～1．5变化时试样的电阻率较低，而且电阻率变化不大。
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| 关 键 词： | 铜铝氧化物 P型导电 透明导电膜 沉淀法 |
| 文章编号： | 1001-5868(2005)06-0515-04 |
| 收稿时间： | 2005-04-18 |
| 修稿时间： | 2005-04-18 |
P-type Transparent Conducting Copper Aluminum Oxide Films with Different Cu/Al1 Ratio |
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| ZHOU Qiang, JI Zhen-guo, ZHAO Li-na, CHEN Chen, WANG Chao. P-type Transparent Conducting Copper Aluminum Oxide Films with Different Cu/Al1 Ratio[J]. Semiconductor Optoelectronics, 2005, 26(6): 515-518 |
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| Authors: | ZHOU Qiang JI Zhen-guo ZHAO Li-na CHEN Chen WANG Chao |
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| Affiliation: | State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou 310027, CHN |
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| Abstract: | P-type transparent conducting copper aluminum oxide samples with different Cu/Al ratio were prepared by the sedimentation of cupric acetate and aluminum acetate at high temperature and solid-phase-reaction. X-ray diffraction results show that the powder samples consist of tenorite structured CuO, delafossite structured CuA102, spinel structured CuA1204and corundum structured Al2O3. EDAX analysis indicate that the actual Cu/A1 ratio in the samples increases with Cu/Al ratio in raw materials. Conducting type measurement results show that all the samples are p-type. The lowest and relative stable resistivity is obtained at the Cu/Al ratio of 1.0-1. 5. |
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| Keywords: | CuAlO2 p-type conducting transparent conducting films sedimentation |
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