Effect of a valence-band barrier on the quantum efficiency and background-limited dynamic resistance of compositionally graded HgCdTe P-on-n heterojunction photodiodes |
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Authors: | M. H. Weiler M. B. Reine |
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Affiliation: | (1) Loral Infrared & Imaging Systems, Inc., 02173 Lexington, MA |
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Abstract: | A new analytical model for the bias-dependent quantum efficiency of a HgCdTe P-on-n heterojunction photodiode with a valence band barrier elucidates the important physics of the phenomenon and shows that the background-induced shunt resistance is a result of the same mechanism, that is, a tendency of the light-induced carriers to pile up in the base layer due to the retarding field produced by the barrier. A parameterized version of the model agrees well with experimental current-vs-voltage and noise measurements. |
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Keywords: | Band offset heterojunctions HgCdTe quantum efficiency |
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